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各位英语高手，老大们，在下自从被导师骂了英语水平太差之后，痛定思痛，决定通过翻译一些文献来
提高自己的英语水平，以下是小弟今天的翻译小作，绝对原创，有翻译不对的地方，还忘各位大大多
提宝贵意见。小弟才能有所提高呀。
1. INTRODUCTION
1.前言
Recently alloys of silicon and germanium have been studied a great deal for possible use in high-speed device and optoelectronics applications.
近年来锗硅合金在高速器件和光电子应用中有大量的可能使用研究。
Devices made with strained epitaxial films of this material can be much faster than devices that exclusively use silicon.’
由这种材料的应变外延薄膜制作的器件可以比单独由硅制作的器件快的多。
The films may be grown by molecular-beam epitaxy (MBE) or by ultra- high-vacuum chemical-vapor deposition (UHVCVD) .
这种薄膜可以由分子束外延（MBE）或超高真空化学气相淀积（UHVCVD）生长。
It is desirable to develop a routine method for determining the depth profile of the Ge concentration in a grown film.
这就需要发展一种决定在生长薄膜中锗浓度纵向分布的常规方法。
A number of techniques are available for that purpose.
为了这个目的，有很多技术可以采用。
Among the nondestructive techniques, Rutherford back- scattering spectrometry (RBS) is one of the most wide- spread.
在非损伤技术中，卢瑟福背散射是使用最广泛的技术之一。
The depth resolution of that technique (about 50 nm), however, is not sufficient.
那种技术的纵向分辨率（大约50 nm），然而并不足够。
Optical methods such as spectroscopic ellipsometry and IR reflection/absorption spectroscopy, with or without Kramers-Kronig analysis, can yield valuable information on the depth structure of the Ge concentration; however, when using these methods to obtain quantitative information in terms of Ge concentration depth profiles, one has to assume a certain model Ge depth profile of which the parameters can be obtained by fitting the results of the simulations using the model profile to the measured data:
分光椭偏仪和红外反射/吸收光谱，利用或不用Kramers-Kronig分析，可以得出有用的锗浓度的纵向结构信息；然而，当使用这些方法得到按锗浓度纵向分布的定量信息时，不得不假设某一锗纵向分布的模型，其参数可以通过拟合分布模型仿真结果和测量数据得到。
A direct, unambiguous interpretation of the measurement data is usually not possible.
一个直接的明确对于测量结果的解释通常不可能。
Among the destructive techniques able to provide the desired depth resolution the most widely used technique is secondary-ion-mass spectroscopy (SIMS).
在可以提供所希望的纵向分辨率的损伤技术中，最广泛运用的是二次离子质谱（SIMS）。
This method has two drawbacks, namely the size and the cost of the apparatus are substantial, and, since sputtering by energetic ions ( -5 keV) is used to gradually remove the film material, the roughening of the surface limits the depth resolution to about 5 nm (worst case) for routine measurements.
这种技术有两种缺点，也就是说装置的尺寸很大成本很高，而且，由于使用能量离子( -5 keV)溅射以逐渐去除薄膜材料，对于常规测量表面的粗糙限制纵向分辨率最小的5 nm (最差情况)
In this article we present an easily implemented (destructive) method that is able to provide the Ge concentration of the SiGe alloy at the desired depth resolution.
本文提供了一种简单的执行（损伤的）方法，它可以在期望的纵向分辨率下得到锗硅合金的锗浓度。
The gradual removal of the material to be analyzed is done by RIE.
用RIE逐渐去除材料以分析。
In situ ellipsometry is used to determine the optical parameters of surface of the SiGe structure as it is etched.
SiGe结构的被刻蚀后的表面光学参数由同步椭偏仪决定。
Since ellipsometry is not sensitive to emission or absorption of light by the plasma, it is one of the few surface techniques that is compatible with a plasma environment.
因为椭偏仪对等离子的光的发射和吸收不敏感，它是少数几种与等离子环境相兼容的表面技术之一。
For an accurate depth profiling of the Ge concentration, detailed knowledge of the dependence of the refractive index of the SiGe alloy as a function of the Ge concentration is required.
对于一个准确的锗浓度纵向分布来说，需要有锗硅合金的反射率关系以作为锗浓度的函数的详细知识。
A complication is that the films are strained and epitaxial, with hardly any defects.
一个复杂因素是薄膜为应变和单晶的，几乎没有任何缺陷。
This special type of material may possess optical constants that are different from those at the fully relaxed material.
这种特别的材料类型可能会拥有与完全驰豫材料不同光学常数。
The references in the literature that do discuss the optical parameters of the material do not provide the desired accuracy.
文献参考中讨论了材料的光学参数但没有提供需要的精确度。
Furthermore, they are all dealing with fully relaxed material.
另外，它们都处理完全弛豫的材料。
Therefore, an accurate determination of the complex refractive index of the material as a function of Ge content is necessary.
因此，需要精确的决定作为锗浓度函数的材料复数折射率。
To this end, we have performed in situ ellipsometry measurements while etching through homogeneous, comparatively thick SiGe films of a known Ge content.
为此，我们实施了对于刻蚀均匀的比较厚的已知锗浓度的锗硅薄膜的同步椭偏测量。
The film thickness cannot exceed a maximum value which depends on the Ge content.
薄膜的膜厚不可以超过由锗浓度所决定的最大数值。
Films thicker than this maximum value contain many defects, and they will be partially relaxed.
膜厚超过这一最大值会包含很多缺陷，它将部分弛豫。
The Ge concentration has been calibrated with RBS.
锗的浓度由RBS校正。
RBS directly yields the total Ge “dose” present on the surface.
RBS直接得到表面总锗剂量。
With the film thickness, which was determined using transmission electron microscopy (TEM) , and the known material number density (since the film is epitaxial on silicon, the number density is the same as in silicon crystals), this determines the Ge concentration.
由通过隧道电镜（TEM）决定的膜厚和已知材料的密度（因为薄膜为硅上外延，密度与硅单晶相同），决定了锗的浓度。
An accurate analysis of the data provided by the ellipsometer now yields the desired complex refractive index
由椭偏仪提供的对数据的精确分析得出所需复数折射率。
The present article has two goals: first, the determination of the dependence of the complex refractive index of SiGe alloys on the Ge concentration, and second, the demonstration of the application of in situ ellipsometry during RIE for depth profiling of the Ge content.
本文有两个目标：第一，决定锗硅合金的复数折射率与锗浓度的关系，第二，验证得到锗浓度的纵向分布的RIE同步椭偏测量的应用。
In the following we first discuss the experimental setup.
之后我们首先讨论实验的建立。
Then the numerical algorithm which is used to interpret the direct results of the ellipsometer in terms of optical parameters is described.
然后描述用于解释由椭偏仪直接得到的光学参数的算法。
After that, the calibration of the system, necessary to eliminate the influence of interfering physical phenomena, is discussed and, finally, some results are shown.
之后，讨论了校正系统以消除妨碍物理现象，最后，展示了一些数据。 |
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发表于 2006-6-12 22:36:58